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Nucleation and growth of Ge nanoclusters on the Si(111)‐(7 × 7) surface studied by scanning tunneling microscopy
Author(s) -
Zhang Yongping,
Chen Zhiqian,
Xu Guo Qin,
Tok Eng Soon
Publication year - 2015
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.5693
Subject(s) - nanoclusters , scanning tunneling microscope , nucleation , substrate (aquarium) , crystallography , germanium , materials science , silicon , surface reconstruction , nanotechnology , chemistry , chemical physics , surface (topology) , optoelectronics , geometry , organic chemistry , oceanography , mathematics , geology
Nucleation and growth of two‐dimensional Ge nanoclusters on the Si(111)‐(7 × 7) surface at elevated substrate temperatures have been studied using scanning tunneling microscopy. The uniformity of the Ge nanoclusters is improved with the increase of substrate temperature, and ordered Ge nanoclusters are formed on the faulted and unfaulted halves of (7 × 7) unit cell at substrate temperature of 200 °C. It is proposed that the Ge nanoclusters consist of six Ge atoms with three on top of the center adatoms and others on the rest atoms within one half of a unit cell. Copyright © 2014 John Wiley & Sons, Ltd.