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On the evolution of Cs droplets in SIMS craters
Author(s) -
Giordani Andrew,
Tuggle Jay,
Winkler Christopher,
Hunter Jerry
Publication year - 2014
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.5657
Subject(s) - x ray photoelectron spectroscopy , substrate (aquarium) , spectroscopy , scanning electron microscope , silicon , analytical chemistry (journal) , in situ , ion , chemistry , ion beam , materials science , chemical engineering , composite material , physics , geology , oceanography , organic chemistry , chromatography , quantum mechanics , engineering
The evolution of cesium droplets on silicon by Cs ion bombardment has been studied. For this work, a (100) Si substrate was sputtered with a 5 keV Cs + primary ion beam at 45° until steady state was established. The evolution of Cs droplets was investigated under in situ O 2 (oxygen jet) and ex situ atmospheric exposure conditions for controlled times. Additionally, the effect of sample heating on Cs droplets was also studied. The techniques used to characterize the Cs droplets were scanning electron microscopy with energy dispersive spectroscopy and X‐ray photoelectron spectroscopy. Our results indicate that Cs droplets evolve through a series of different morphologies before reaching their final form, and the rate of evolution depends strongly on environment (O 2 or atmosphere) and the length of exposure. Copyright © 2014 John Wiley & Sons, Ltd.