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Structure evolution of hydrogenated carbon films from amorphous carbon to fullerene‐like nanostructure
Author(s) -
Wang Chengbing,
Ling Xiaoming,
Shi Jing,
Xia Rongbin
Publication year - 2014
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.5568
Subject(s) - materials science , fullerene , surface roughness , amorphous carbon , amorphous solid , nanostructure , microstructure , carbon fibers , carbon film , thin film , silicon , biasing , chemical vapor deposition , hydrogen , analytical chemistry (journal) , surface finish , plasma enhanced chemical vapor deposition , chemical engineering , nanotechnology , composite material , chemistry , crystallography , metallurgy , composite number , organic chemistry , voltage , physics , quantum mechanics , engineering
A–C:H (hydrogenated amorphous carbon) films were deposited by pulsed direct‐current (d.c.) plasma enhanced chemical vapor deposition on silicon substrates. This study investigated the structural and mechanical evolution of the as‐deposited films with fullerene‐like nanostructure. The results showed that pulsed d.c. negative bias (−500 ~ −1000 V) signally influenced the growth rate, hardness, surface roughness, sp 3 content, and friction behavior of the films. As the pulsed d.c. negative bias voltage increased, the sp 3 content, surface roughness, hydrogen content and the friction coefficient of the films decreased; however, the growth rate and the hardness increased. The films deposited at −1000 V with fullerene‐like microstructure display a nanohardness of about 19.7 GPa and the smallest friction coefficient (~0.06). The evolution on mechanical and structural properties of the films are explained by the a–C:H growth mechanism based on the interaction on plasma‐surface interface and the subsurface reactions in the film. Copyright © 2014 John Wiley & Sons, Ltd.