ZnO thin films prepared on titanium substrate by PLD technique at different substrate temperatures | Zendy

Zeng Yong | Zendy; Zhao Yan | Zendy; Jiang Yijian | Zendy

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ZnO thin films prepared on titanium substrate by PLD technique at different substrate temperatures

Author(s) -

Zeng Yong,

Zhao Yan,

Jiang Yijian

Publication year - 2014

Publication title -

surface and interface analysis

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.52

H-Index - 90

eISSN - 1096-9918

pISSN - 0142-2421

DOI - 10.1002/sia.5559

Subject(s) - x ray photoelectron spectroscopy , raman spectroscopy , substrate (aquarium) , materials science , thin film , titanium , photoluminescence , crystallization , pulsed laser deposition , chemical engineering , analytical chemistry (journal) , diffraction , nanotechnology , optoelectronics , metallurgy , chemistry , optics , oceanography , physics , chromatography , engineering , geology

ZnO thin films were grown by pulsed laser deposition on titanium substrates at different substrate temperatures ranging from 300 to 700 °C. X‐ray diffraction (XRD), X‐ray photoelectron spectroscopy (XPS),photoluminescence, and Raman spectroscopy are employed to investigate the change of properties. XRD, XPS, and Raman data showed that the films consisted of TiO 2 at high substrate temperature, which will deteriorate the crystallization quality of ZnO films. The optimum temperature for the growth of ZnO films on the Ti substrate is about 500 °C in this paper. The ZnO films grown on titanium substrate can be used in direct current, microwave, and medical applications. Copyright © 2014 John Wiley & Sons, Ltd.

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