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The effect of the substrate on thermal stability of CeO x and Rh–Ce–O thin films
Author(s) -
Ševčíková Klára,
Nehasil Václav,
Zahoranová Tatiana,
Vorokhta Mykhaylo,
Tsud Nataliya,
Yoshikawa Hideki,
Kobata Masaaki,
Kobayashi Keisuke,
Matolín Vladimír
Publication year - 2014
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.5503
Subject(s) - cerium , substrate (aquarium) , cerium oxide , rhodium , x ray photoelectron spectroscopy , thin film , thermal stability , materials science , silicon , oxide , catalysis , chemical engineering , sputter deposition , metal , sputtering , analytical chemistry (journal) , inorganic chemistry , chemistry , metallurgy , nanotechnology , biochemistry , oceanography , chromatography , engineering , geology
Cerium oxide doped by a noble metal has been researched intensively for its high catalytic activity. In the presented study, Rh–Ce–O and CeO x thin films were deposited onto SiO 2 and Cu substrates by radio‐frequency magnetron sputtering. Thermal stability of the films was investigated by photoelectron spectroscopy techniques. Our results show that the substrate has a great influence on the stability of the overlayers. Rh–Ce–O deposited on Cu decomposes into rhodium and cerium oxide separate phases above 600 K. In contrary, the Rh–Ce–O film on SiO 2 remains stable up to 800 K, but silicon migrates from the substrate into the film, forming cerium silicate. We suggest that a strong interaction between SiO 2 substrate and Rh–Ce–O, or CeO x films, could be responsible for higher thermal stability compared to films deposited onto Cu. Copyright © 2014 John Wiley & Sons, Ltd.
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