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FIB‐SIMS quantification using TOF‐SIMS with Ar and Xe plasma sources
Author(s) -
Stevie F. A.,
Sedlacek L.,
Babor P.,
Jiruse J.,
Principe E.,
Klosova K.
Publication year - 2014
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.5483
Subject(s) - spectrum analyzer , analytical chemistry (journal) , ion , ion source , secondary ion mass spectrometry , plasma , chemistry , ion beam , materials science , chromatography , optics , quantum mechanics , physics , organic chemistry
A novel time of flight SIMS analyzer provides a new approach to SIMS analysis as an addition to a focused ion beam SEM instrument. The combination of this analyzer with a high current plasma ion source offers new opportunities for analysis, particularly in the study of coatings, which require ultra‐deep profiling. Use of this instrumentation showed the ability to detect and quantify a number of elements. Quantification was obtained for Li, Na, K ion implanted in Si and for B in a sample with known concentration. Use of the electron beam from the electron column permitted analysis of 300‐nm SiO 2 /Si implanted with BF 2 . Copyright © 2014 John Wiley & Sons, Ltd.