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Electronic structures of SiO 2 thin films via Ar gas cluster ion beam sputtering
Author(s) -
Kyoung Yong Koo,
Chung Jae Gwan,
Lee Hyung Ik,
Yun DongJin,
Lee Jae Cheol,
Kim Yong Su,
Oh Suhk Kun,
Kang Hee Jae
Publication year - 2014
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.5460
Subject(s) - sputtering , thin film , ion , ion beam , x ray photoelectron spectroscopy , analytical chemistry (journal) , valence (chemistry) , materials science , substrate (aquarium) , chemistry , nanotechnology , nuclear magnetic resonance , physics , oceanography , organic chemistry , chromatography , geology
The electronic structure of a SiO 2 thin film on a Si substrate after Ar gas cluster ion beam (GCIB) sputtering was investigated using photoemission spectroscopy whose results were compared with those obtained via mono‐atomic Ar ion beam sputtering. The depth profile of the SiO 2 thin film revealed that Ar ion sputtering had a great deal of influence on electronic structure of the SiO 2 thin film. However, Ar GCIB sputtering under sample rotation at the grazing incident angle did not exhibit any significant transition of electronic structure of the SiO 2 thin film. The valence band structure of the SiO 2 thin film during Ar GCIB sputtering was almost the same as that of the as‐grown SiO 2 thin film. Our results showed that Ar GCIB could be useful for potential applications of oxide materials. Copyright © 2014 John Wiley & Sons, Ltd.