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New method for the preparation of S doped Fe samples characterized by AES and TOF‐SIMS depth profiling
Author(s) -
Barnard P. E.,
Terblans J. J.,
Swart H. C.
Publication year - 2014
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.5448
Subject(s) - analytical chemistry (journal) , secondary ion mass spectrometry , auger electron spectroscopy , homogeneity (statistics) , dopant , melting point , sample preparation , chemistry , mass spectrometry , doping , auger , materials science , chromatography , physics , statistics , mathematics , optoelectronics , organic chemistry , atomic physics , nuclear physics
A new method for the preparation of sulfur (S) doped iron (Fe) samples is presented. The required amount of S in Fe is obtained by allowing the vaporized form of S to diffuse into a Fe sample (10 mm diameter, 0.5 mm thick) kept at a temperature of 750 K. Depth profile analysis using Auger Electron Spectroscopy and Time‐of‐Flight Secondary Ion Mass Spectrometry (TOF‐SIMS) showed that the method is reproducible and can be used for the preparation of samples with different S concentrations. It was also found that S deposited onto Fe forms the desired FeS phase, which will prevent S from evaporating when the sample is annealed. Prepared samples were annealed to obtain homogeneity of S in Fe, after which the amount of S in the respective samples was determined by quantitative TOF‐SIMS. The outcome of the results suggests the application of this method to other high melting point host and low melting point dopant systems. Copyright © 2014 John Wiley & Sons, Ltd.