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Determination of interface locations and layer thicknesses in SIMS and AES depth profiling of Si/Ti multilayer films by 50 at% definition
Author(s) -
Hwang Hye Hyun,
Jang Jong Shik,
Kang Hee Jae,
Kim Kyung Joong
Publication year - 2014
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.5415
Subject(s) - auger electron spectroscopy , rutherford backscattering spectrometry , analytical chemistry (journal) , auger , secondary ion mass spectrometry , materials science , aluminium , secondary ion mass spectroscopy , silicon , alloy , spectroscopy , ion beam analysis , ion beam , chemistry , thin film , ion , metallurgy , atomic physics , nanotechnology , physics , organic chemistry , chromatography , quantum mechanics , nuclear physics
Determination of the interface locations and the layer thicknesses in SIMS depth profiling of Si/Ti multilayer films was investigated by cesium ion beam. The raw SIMS depth profiles were converted to the compositional depth profiles by the relative sensitivity factors of Si and Ti derived from the atomic fractions of a reference Si‐Ti alloy film determined by Rutherford backscattering spectroscopy. The locations of the interfaces were determined by 50 at% definition in the compositional SIMS depth profiles, and the thicknesses of the Si and Ti layers were measured from the interfaces. The layer thicknesses of the Si/Ti multilayer film were also investigated by Auger electron spectroscopy depth profiling using the same process and same definition. Copyright © 2014 John Wiley & Sons, Ltd.