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SIMS depth profiling analysis of P‐doped n‐type Si layer to develop the Si QD solar cell
Author(s) -
Kim Tae Woon,
Baek Hyun Jeong,
Jang Jong Shik,
Lee Seung Mi,
Kim Kyung Joong
Publication year - 2014
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.5407
Subject(s) - doping , silicon , solar cell , materials science , heterojunction , quantum dot , optoelectronics , secondary ion mass spectrometry , diffusion , analytical chemistry (journal) , chemistry , mass spectrometry , physics , chromatography , thermodynamics
Doping of phosphorus in silicon is important for the formation of n‐type semiconducting material for the silicon‐based electronic devices. In this study, the diffusion behavior of P in a SiO 2 /InP‐doped Si multilayer film was investigated by SIMS depth profiling. It showed a clear preferential diffusion of P to the Si/SiO 2 interface regions. This behavior will act as a negative factor for the active doping of P in silicon quantum dot (QD) solar cells. As a result, the conversion efficiency of a heterojunction Si QD solar cell with a P‐doped Si QD layer was much lower than that with a B‐doped Si QD layer. Copyright © 2014 John Wiley & Sons, Ltd.
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