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Layer‐by‐layer growth of high‐optical‐quality ZnO epitaxy film on Si(111) substrate using a MgO/TiN buffer layer by pulsed‐laser deposition
Author(s) -
Zhang Xia,
Chen Hong,
Yan Zhi,
Zhou Xiying,
Lin Wensong,
Li Xiaomin
Publication year - 2014
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.5401
Subject(s) - epitaxy , layer (electronics) , materials science , photoluminescence , substrate (aquarium) , pulsed laser deposition , optoelectronics , electron diffraction , tin , thin film , transmission electron microscopy , reflection high energy electron diffraction , full width at half maximum , deposition (geology) , diffraction , analytical chemistry (journal) , optics , nanotechnology , chemistry , metallurgy , paleontology , oceanography , physics , chromatography , sediment , geology , biology
By introducing a thin MgO/TiN buffer, layer‐by‐layer growth of ZnO epilayer on Si(111) has been realized. ZnO film directly on Si(111) substrate is poly‐crystallized, whereas its quality could be significantly improved by inserting the buffer layer. In the case of employing the buffer layer, in situ reflection high‐energy electron diffraction demonstrates that ZnO film is epitaxy and proceeding in the layer‐by‐layer growth mode. High‐resolution X‐ray diffraction indicates the relationship is ZnO(0002)//MgO(111)//Si(111) (out‐of‐plane) and the ZnO (0002) peak with the full width at half maximum of 1.3°. High‐resolution transmission electron microscopy further validates that the in‐plane epitaxial relationship is ZnO 11 2 ¯ 0 //MgO 10 1 ¯//Si 10 1 ¯. In photoluminescence, epitaxy ZnO film shows clear exciton‐related peaks, which are believed to be of high quality. Copyright © 2014 John Wiley & Sons, Ltd.