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Quantification of AES depth profiling data of polycrystalline Al films with Gaussian and non‐Gaussian surface height distributions
Author(s) -
Jian W.,
Liu Y.,
Wang X. Y.,
Rao S. P.,
Hofmann S.,
Wang J. Y.
Publication year - 2013
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.5241
Subject(s) - gaussian , surface finish , auger electron spectroscopy , sputtering , surface roughness , crystallite , auger , materials science , analytical chemistry (journal) , optics , chemistry , thin film , crystallography , atomic physics , physics , composite material , nanotechnology , computational chemistry , chromatography , nuclear physics
Sputtering‐induced roughness is the main distortional factor on the depth resolution of measured depth profiles, in particular, for sputtering of polycrystalline metals. Frequently, the surface height distribution of the sputtering‐induced roughness exhibits an asymmetrical feature. In such a case, a non‐Gaussian height distribution function (HDF) has to be applied for the quantification of a measured depth profile. By replacing the usually applied Gaussian HDF with that of an asymmetrical triangle in the Mixing‐Roughness‐Information depth model, measured Auger electron spectroscopy depth profiling data of the interface of polycrystalline Al films on Si are perfectly fitted. The asymmetric triangle height distributions obtained from the best fit are a reasonable approximation of the height distributions measured by atomic force microscopy. Copyright © 2013 John Wiley & Sons, Ltd.