Nanoscale relaxation in Ru–Si growth on a silicon (111) surface | Zendy

Toramaru M. | Zendy; Kobayashi N. | Zendy; Kawamura N. | Zendy; Ohno S. | Zendy; Miyamoto Y. | Zendy; Shudo K. | Zendy

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Nanoscale relaxation in Ru–Si growth on a silicon (111) surface

Author(s) -

Toramaru M.,

Kobayashi N.,

Kawamura N.,

Ohno S.,

Miyamoto Y.,

Shudo K.

Publication year - 2013

Publication title -

surface and interface analysis

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.52

H-Index - 90

eISSN - 1096-9918

pISSN - 0142-2421

DOI - 10.1002/sia.5235

Subject(s) - metastability , silicon , substrate (aquarium) , nanoscopic scale , ruthenium , epitaxy , chemical physics , materials science , layer (electronics) , relaxation (psychology) , nanotechnology , chemistry , condensed matter physics , optoelectronics , catalysis , physics , geology , psychology , social psychology , biochemistry , oceanography , organic chemistry

The formation and growth of Ru–Si islands were observed on a ruthenium‐deposited Si(111) surface during successive cycles of heating for 30 s at 1423 K and cooling. Lateral and vertical growth is analysed. The large lattice mismatch of small Ru2Si3 islands with the Si substrate modulates a Volmer–Weber type growth mode. When the islands are large, Ru2Si3 crystals are situated on a metastable buffer layer. Copyright © 2013 John Wiley & Sons, Ltd.

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