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Nanoscale relaxation in Ru–Si growth on a silicon (111) surface
Author(s) -
Toramaru M.,
Kobayashi N.,
Kawamura N.,
Ohno S.,
Miyamoto Y.,
Shudo K.
Publication year - 2013
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.5235
Subject(s) - metastability , silicon , substrate (aquarium) , nanoscopic scale , ruthenium , epitaxy , chemical physics , materials science , layer (electronics) , relaxation (psychology) , nanotechnology , chemistry , condensed matter physics , optoelectronics , catalysis , physics , geology , psychology , social psychology , biochemistry , oceanography , organic chemistry
The formation and growth of Ru–Si islands were observed on a ruthenium‐deposited Si(111) surface during successive cycles of heating for 30 s at 1423 K and cooling. Lateral and vertical growth is analysed. The large lattice mismatch of small Ru2Si3 islands with the Si substrate modulates a Volmer–Weber type growth mode. When the islands are large, Ru2Si3 crystals are situated on a metastable buffer layer. Copyright © 2013 John Wiley & Sons, Ltd.