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ToF‐SIMS nitrogen profiles in oxynitride thin films: correlation with XPS bonding configurations
Author(s) -
Ravizza E.,
Spadoni S.,
Grasso S.,
Vitali M. E.,
De Marco C.,
Ghidini G.
Publication year - 2013
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.5153
Subject(s) - x ray photoelectron spectroscopy , sputtering , analytical chemistry (journal) , secondary ion mass spectrometry , nitrogen , silicon oxynitride , thin film , time of flight , silicon , chemistry , static secondary ion mass spectrometry , ion , mass spectrometry , yield (engineering) , materials science , silicon nitride , nanotechnology , nuclear magnetic resonance , organic chemistry , chromatography , metallurgy , physics
Thin silicon dioxide films nitrided in N 2 /NO/O 2 atmosphere at different temperature and NO/O 2 flow ratio were investigated by time of flight secondary ion mass spectrometry (ToF‐SIMS) using negative acquisition mode and Cs + sputtering at low energy. The N depth distributions obtained by the ToF‐SIMS profiles were compared with the correspondent N1s peaks acquired in X‐ray photoelectron spectroscopy, demonstrating that the gradient in ion yield which occurs at the interface using these measurement conditions can be useful to quantify the amount of nitrogen placed exactly at the interface. Copyright © 2012 John Wiley & Sons, Ltd.