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Oxygen accumulation effect for depth profiling of thin‐multilayered sample using low‐energy oxygen ion beam
Author(s) -
Nishinomiya Suguru,
Kubota Naoyoshi,
Hayashi Shunichi,
Takenaka Hisataka
Publication year - 2013
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.5107
Subject(s) - sputtering , yield (engineering) , ion , oxygen , secondary ion mass spectrometry , irradiation , chemistry , ionization , ion beam , analytical chemistry (journal) , mass spectrometry , atomic physics , static secondary ion mass spectrometry , ion beam deposition , beam (structure) , thin film , materials science , optics , nanotechnology , nuclear physics , physics , organic chemistry , chromatography , metallurgy
This paper tries to discuss the change of the secondary ion yield, sputtered neutrals yield and the change of the internal energy of sputtered neutrals with O 2 + beam bombardment. For this discussion, we researched the influence of the accumulation effect with O 2 + beam bombardment by using the secondary ion mass spectrometry (SIMS) and the resonance‐enhanced multiphoton ionization sputtered neutral mass spectrometry (REMPI‐SNMS). In order to reveal the influence of different oxygen implantation depth, we used O 2 + beam of 0.5, 1.0 and 2.0 keV and compared the amounts of secondary ions and sputtered neutrals for the nano‐multilayered samples. The results of the SIMS and SNMS measurement indicated that the accumulation effect depends on irradiation energy of O 2 + beam because the surface oxygen concentration, which greatly affects secondary ion yield and sputtering neutrals yield, changed for different irradiation energies. In conclusion, it was found that the secondary ion yield, the sputtered neutrals yield and internal energy of sputtered neutrals were significantly changed by oxidation of the matrix elements. Copyright © 2012 John Wiley & Sons, Ltd.