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Computer simulation of layer‐by‐layer sputtering at grazing low‐energy ion‐surface interactions
Author(s) -
Umarov Farid F.,
Dzhurakhalov Abdiravuf A.
Publication year - 2013
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.5086
Subject(s) - sputtering , ion , layer (electronics) , recoil , range (aeronautics) , atomic physics , surface layer , materials science , chemistry , thin film , physics , nanotechnology , composite material , organic chemistry
The peculiarities of sputtering processes at low‐energy Ne grazing ion bombardment of Si(001), SiC(001) and Cu 3 Au(001) surfaces and their possible application for the surface modification have been studied by computer simulation. Sputtering yields in the primary knock‐on recoil atoms regime versus the initial energy of incident ions (0.5–5 keV) and angle of incidence (0–30°) with respect to the target surface have been calculated. It was shown that in the case of grazing ion bombardment, the layer‐by‐layer sputtering is possible, and its optimum is observed within the small angular range of the glancing angles near the threshold sputtering angle. Comparative studies of layer‐by‐layer sputtering for Si(001) and SiC(001) surfaces versus the initial energy of incident ions as well as an effective sputtering and sputtering threshold are discussed. Copyright © 2012 John Wiley & Sons, Ltd.