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Development of nano‐roughness under SIMS ion sputtering of germanium surfaces
Author(s) -
Iacob E.,
Demenev E.,
Giubertoni D.,
Barozzi M.,
Gennaro S.,
Bersani M.
Publication year - 2013
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.4997
Subject(s) - sputtering , ion , surface roughness , surface finish , nano , materials science , ion beam , impact crater , germanium , analytical chemistry (journal) , chemistry , atomic physics , thin film , nanotechnology , optoelectronics , silicon , composite material , organic chemistry , physics , chromatography , astronomy
In this work results, about the formation of topography and roughness induced by secondary ion mass spectrometry ion beam sputtering of single crystal (100) germanium surfaces are reported and related with depth resolution issues and matrix species ( 74 Ge ± ; 74 Ge 16 O ± ; 74 Ge 2 ± ) behavior. In particular, the development of nano‐roughness is studied for both O 2 + and Cs + bombardment at low energy (≤ 3 keV), using a magnetic sector instrument. Analysis was carried out in the sputtering chamber either at ultra‐high vacuum (~10 −9 mbar) or at a reduced pressure (~10 −6 mbar) by oxygen leak. Zalar rotation was also tested as a method to reduce the formation of topography where observed. The results show that ripples are formed under O 2 + sputtering for energies ≤ 1 keV (incidence angle ~60°) without rotation, although their amplitude is very small compared to the crater depth. No relevant roughness is observed in the craters when Cs + ions are used (inc. angle ~50°), while particles of aggregated Cs are detected. Copyright © 2012 John Wiley & Sons, Ltd.