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A statistical interpretation of molecular delta layer depth profiles
Author(s) -
Wucher A.,
Krantzman K.D.,
Lu C.,
Winograd N.
Publication year - 2013
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.4966
Subject(s) - sputtering , fluence , molecular dynamics , layer (electronics) , molecular physics , interpretation (philosophy) , silicon , enhanced data rates for gsm evolution , chemistry , delta , de facto , materials science , computational physics , atomic physics , physics , ion , computational chemistry , nanotechnology , thin film , organic chemistry , telecommunications , astronomy , computer science , political science , law , programming language
The delta layer depth response predicted by a simple statistical sputtering model is compared with molecular sputter depth profile data obtained on Langmuir–Blodgett delta layer systems. All input parameters of the statistical sputtering model are determined from low‐fluence molecular dynamics simulations performed for 20‐keV C 60 cluster bombardment of silicon, making the model de facto parameter free. It is found that both calculated and measured depth response functions can be parametrised by the semiempirical Dowsett expression. The resulting parameters (leading and trailing edge slope, full‐width at half‐maximum) agree surprisingly well with those determined from the measured depth profiles. Copyright © 2012 John Wiley & Sons, Ltd.