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Characterization of LED materials using dynamic SIMS
Author(s) -
Peres P.,
Merkulov A.,
Choi S. Y.,
Desse F.,
Schuhmacher M.
Publication year - 2013
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.4952
Subject(s) - dopant , characterization (materials science) , secondary ion mass spectrometry , analytical chemistry (journal) , impurity , mass spectrometry , optoelectronics , materials science , chemistry , nanotechnology , doping , organic chemistry , chromatography
Improving the manufacturing yield in light emitting diode highly competitive market requires process control strategy similar to what has been applied to integrated circuit (IC) manufacturing for years. Dynamic secondary ion mass spectrometry (SIMS) is a key analytical technique, as it provides depth profiles with excellent detection sensitivity for dopants and impurities, while keeping high analysis throughput. Dynamic SIMS data obtained using the CAMECA IMS 7f will be presented. Based on a double focusing magnetic sector mass spectrometer, this instrument achieves benchmark performance in terms of sensitivity, depth resolution and mass resolution. Depth profiling and detection limits for dopants as well as for light elements will be shown. A method for evaluating the light elements content on high purity samples will also be detailed. Copyright © 2012 John Wiley & Sons, Ltd.