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A surface‐ionization method of detection of a neutral component of indium sputtering under bombardment by cluster ions
Author(s) -
Morozov S. N.,
Rasulev U. Kh.
Publication year - 2013
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.4911
Subject(s) - sputtering , indium , yield (engineering) , ionization , ion , cluster (spacecraft) , projectile , atomic physics , chemistry , analytical chemistry (journal) , materials science , physics , nanotechnology , thin film , metallurgy , chromatography , computer science , organic chemistry , programming language
A surface‐ionization method of measuring the total sputtering yield has been developed. The indium sputtering by Bi m + ( m = 1–7) cluster ions with energy 2–10 keV has been studied. A non‐additive increase in the total sputtering yield with the raise in the number of atoms in cluster projectiles has been found. Copyright © 2012 John Wiley & Sons, Ltd.