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Time of flight elastic recoil detection analysis with toroidal electrostatic analyzer for ultra shallow dopant profiling
Author(s) -
Abo Satoshi,
Horiuchi Hidemasa,
Wakaya Fujio,
Battistig Gabor,
Lohner Tivadar,
Takai Mikio
Publication year - 2012
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.4878
Subject(s) - elastic recoil detection , time of flight , analytical chemistry (journal) , spectral line , materials science , chemistry , atomic physics , thin film , physics , nanotechnology , chromatography , astronomy
A time of flight (TOF) elastic recoil detection analysis (ERDA) with a toroidal electrostatic analyzer (TEA) using 100 keV Ar + probe was developed for B profiling in a Si substrate with low energy ion implantation for shrunk semiconductor devices. In the original ERDA, Bohr energy straggling at a stopping foil affects an energy resolution. Thus, in this study, a flight time from the sample to the TEA detector was used for a mass separation in ERDA without the stopping foil. A beam incident angle normal to the sample and a recoil scattering angle were 75° and 50°, respectively. The samples were Si substrates with and without B + implantation at 2 keV with a dose of 1.5 × 10 16 /cm 2 . A boron depth profile was calculated from the difference of the ERDA spectra with TEA for the Si samples with and without B + implantation. The recoiled B + and Si + signals were well separated in the TOF‐ERDA spectra for B + implanted Si with TEA applied voltages of 0.45 to 1.13 kV. The TOF‐ERDA spectra with TEA applied voltages of 0.45 to 3.44 kV were converted to the ERDA spectra for B + and Si + . The B segregation at the surface was observed in both B depth profile calculated from the decrease in the Si yield by ERDA and the ERDA spectrum for B + converted from the TOF‐ERDA spectra. Copyright © 2012 John Wiley & Sons, Ltd.