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Depth profiling of NbxO/W multilayers: effect of primary ion beam species (O2 + , Ar + and Cs + )
Author(s) -
He A.,
Xu S.,
ForoughiAbari A.,
Karpuzov D.
Publication year - 2012
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.4849
Subject(s) - sputtering , argon , ion , atomic physics , chemistry , ion beam , vacancy defect , analytical chemistry (journal) , oxygen , materials science , thin film , physics , crystallography , nanotechnology , organic chemistry , chromatography
Depth profiling of Nb x O/W multilayered samples was carried out using O 2 + , Cs + or Ar + beams of different energies (2 keV, 1 keV and 0.5 keV). The obtained depth profiles showed that sputtering with O 2 + or Ar + beams can reveal the distribution of light elements, while sputtering with Cs + cannot show correctly their distribution if lower energy of 0.5 keV is applied. SRIM simulations show that changes in primary energy of sputter ions have much stronger effect on deposited energy incl. vacancy/ion and sputter yields than for oxygen and argon ion beam etching. It is suggested that O 2 + or Ar + sputter sources should be used when both light and heavy species are present in nano‐scale multilayered targets. Copyright © 2012 John Wiley & Sons, Ltd.