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XPS depth analysis of CuO by electrospray droplet impact
Author(s) -
Sakai Yuji,
Ninomiya Satoshi,
Hiraoka Kenzo
Publication year - 2012
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.4843
Subject(s) - x ray photoelectron spectroscopy , etching (microfabrication) , copper , copper oxide , oxide , irradiation , chemistry , electrospray , analytical chemistry (journal) , materials science , chemical engineering , mass spectrometry , nanotechnology , chromatography , organic chemistry , layer (electronics) , physics , nuclear physics , engineering
The electrospray droplet impact (EDI) is presented as a new etching technique that induces almost no surface damage left after irradiation. We have previously reported that selective etching was not observed after EDI irradiation for organic materials. The present work made a comparative XPS study on the CuO etched by Ar + and EDI. Although marked reduction of CuO was observed with Ar + etching, no chemical modification was occurred by EDI. The etching rate of a few nm/min with EDI was estimated for copper oxide under the present experimental conditions. Copyright © 2012 John Wiley & Sons, Ltd.