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Reflection electron energy loss spectroscopy for ultrathin gate oxide materials
Author(s) -
Shin Hye Chung,
Tahir Dahlang,
Seo Soonjoo,
Denny Yus Rama,
Oh Suhk Kun,
Kang Hee Jae,
Heo Sung,
Chung Jae Gwan,
Lee Jae Cheol,
Tougaard Sven
Publication year - 2012
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.3861
Subject(s) - electron energy loss spectroscopy , x ray photoelectron spectroscopy , band gap , thin film , spectroscopy , oxide , atomic layer deposition , analytical chemistry (journal) , materials science , gate oxide , electron , reflection (computer programming) , band offset , optoelectronics , chemistry , valence band , nanotechnology , physics , nuclear magnetic resonance , transistor , quantum mechanics , chromatography , voltage , transmission electron microscopy , computer science , metallurgy , programming language
The band alignment of HfZrO 4 gate oxide thin films on Si (100) deposited by the atomic layer deposition method has been investigated using reflection electron energy loss spectroscopy and XPS. The band gap of HfZrO 4 gate oxide thin film is 5.40 ± 0.05 eV. The valence band offset (Δ E v ) and the conduction band offset (Δ E c ) are 2.50 ± 0.05 eV and 1.78 ± 0.05 eV, respectively. These values satisfy the minimum requirement for the hole and electron barrier heights of larger than 1 eV for device applications. We have demonstrated that the quantitative analysis of reflection electron energy loss spectroscopy spectra obtained from HfZrO 4 thin films provides us a straightforward way to determine the optical properties and the inelastic mean free path of ultrathin gate oxide materials. Copyright © 2012 John Wiley & Sons, Ltd.
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