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Influence of nonstationary atomic mixing on depth resolution in sputter depth profiling
Author(s) -
Wang J. Y.,
Liu Y.,
Hofmann S.,
Kovac J.
Publication year - 2012
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.3855
Subject(s) - sputtering , mixing (physics) , surface finish , surface roughness , ion , chemistry , materials science , analytical chemistry (journal) , optics , molecular physics , thin film , nanotechnology , physics , metallurgy , composite material , organic chemistry , chromatography , quantum mechanics
Atomic mixing is an important parameter in the quantitative description of sputter depth profiles by the mixing‐roughness‐information depth model. By changing the atomic mixing length from zero to a stationary state value, it is possible to simulate the transient zone at the beginning of sputter depth profiling with noble gas ions, which is important for shallow depth profiles. Accordingly, the depth profile is gradually broadened and the depth resolution value increases with sputtered depth. Applications of changing the atomic mixing length in the mixing‐roughness‐information depth model are shown to yield excellent fits for measured AES depth profiles of N + implantation in Co films. Copyright © 2011 John Wiley & Sons, Ltd.