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The density of interface states and their relaxation times in Au/Bi 4 Ti 3 O 12 /SiO 2 /n‐Si(MFIS) structures
Author(s) -
Bülbül M. M.,
Altındal Ş.,
Parlaktürk F.,
Tataroğlu A.
Publication year - 2011
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.3749
Subject(s) - materials science , schottky diode , condensed matter physics , dielectric , conductance , analytical chemistry (journal) , ferroelectricity , annealing (glass) , bismuth , band gap , diode , optoelectronics , chemistry , physics , chromatography , metallurgy , composite material
Bismuth titanate (Bi 4 Ti 3 O 12 ) (BTO) thin films were fabricated on an n ‐type Si substrate and annealed by rapid thermal annealing methods. The I‐V measurement shows that the device has properties of Schottky diode with the Φ B0 of 0.76 eV, n of 2.42, and leakage current of about 10 −7 A at − 8 V. The experimental C‐V‐f and G/w‐V‐f characteristics of metal‐ferroelectric‐insulator‐semiconductor (MFIS) structures show fairly large frequency dispersion especially at low frequencies due to interface states N ss . The energy distribution of (N ss ) has been determined by using the high‐low frequency capacitance (C HF − C LF ) and conductance method. The relaxation time (τ) of interface states was calculated from the conductance method. It has been shown that both the N ss and relaxation time increase almost exponentially with bias, which activates traps located at deeper gap energies. Copyright © 2011 John Wiley & Sons, Ltd.