D & TOF‐SIMS failure analysis of P‐buried layer from BiCMOS transistors | Zendy

Budri Thanas | Zendy; Sehgal Akshey | Zendy; Arsenault Scott | Zendy; Klatt Jeffrey | Zendy; Noort Wibo Van | Zendy; Ruby Scott | Zendy; Ramdani Jamal | Zendy; Allard Paul | Zendy; Schnieders Albert | Zendy

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D & TOF‐SIMS failure analysis of P‐buried layer from BiCMOS transistors

Author(s) -

Budri Thanas,

Sehgal Akshey,

Arsenault Scott,

Klatt Jeffrey,

Noort Wibo Van,

Ruby Scott,

Ramdani Jamal,

Allard Paul,

Schnieders Albert

Publication year - 2011

Publication title -

surface and interface analysis

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.52

H-Index - 90

eISSN - 1096-9918

pISSN - 0142-2421

DOI - 10.1002/sia.3668

Subject(s) - transistor , layer (electronics) , yield (engineering) , materials science , optoelectronics , bicmos , metal , bipolar junction transistor , analytical chemistry (journal) , chemistry , nanotechnology , electrical engineering , engineering , metallurgy , chromatography , voltage

D & TOF‐SIMS instruments are used in conjunction with other analytical techniques in order to identify the sources of metallic contamination and particle‐type defects. In this paper D & ToF‐SIMS are used to identify metals in the P‐type buried layer of BiCMOS transistors and eliminate them in order to improve the overall device performance and process yield. Copyright © 2010 John Wiley & Sons, Ltd.

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