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D & TOF‐SIMS failure analysis of P‐buried layer from BiCMOS transistors
Author(s) -
Budri Thanas,
Sehgal Akshey,
Arsenault Scott,
Klatt Jeffrey,
Noort Wibo Van,
Ruby Scott,
Ramdani Jamal,
Allard Paul,
Schnieders Albert
Publication year - 2011
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.3668
Subject(s) - transistor , layer (electronics) , yield (engineering) , materials science , optoelectronics , bicmos , metal , bipolar junction transistor , analytical chemistry (journal) , chemistry , nanotechnology , electrical engineering , engineering , metallurgy , chromatography , voltage
D & TOF‐SIMS instruments are used in conjunction with other analytical techniques in order to identify the sources of metallic contamination and particle‐type defects. In this paper D & ToF‐SIMS are used to identify metals in the P‐type buried layer of BiCMOS transistors and eliminate them in order to improve the overall device performance and process yield. Copyright © 2010 John Wiley & Sons, Ltd.