Defect investigations of SiCGe epilayer grown on 6H‐SiC | Zendy

Lianbi Li | Zendy; Zhiming Chen | Zendy; Ying Yang | Zendy; Jia Li | Zendy; Ning Wang | Zendy

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Defect investigations of SiCGe epilayer grown on 6H‐SiC

Author(s) -

Lianbi Li,

Zhiming Chen,

Ying Yang,

Jia Li,

Ning Wang

Publication year - 2011

Publication title -

surface and interface analysis

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.52

H-Index - 90

eISSN - 1096-9918

pISSN - 0142-2421

DOI - 10.1002/sia.3649

Subject(s) - selected area diffraction , transmission electron microscopy , heterojunction , materials science , stacking , thin film , scanning electron microscope , chemical vapor deposition , optoelectronics , diffraction , crystallography , ternary operation , nanotechnology , chemistry , optics , composite material , computer science , physics , organic chemistry , programming language

SiCGe/6H‐SiC heterojunction is essential to the development of SiC optoelectronic devices and light‐activated SiC switching devices. In this work, the ternary alloy SiCGe samples grown on 6H‐SiC substrates in a conventional hot‐wall chemical vapor deposition system have been studied by scanning electron microscope and transmission electron microscope. Selected area diffraction (SAED) patterns show that SiCGe thin films have a zinc‐blende structure. Typical double positioning boundaries, stacking faults and microtwins in SiCGe thin films were observed and validated by SAED patterns. The growth mechanisms of these defects were investigated. Copyright © 2010 John Wiley & Sons, Ltd.

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