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Nanostructure formation onto a tip of field gas ion emitter by field‐assisted oxygen etching
Author(s) -
Kobayashi Y.,
Yasuhiko S.,
Morikawa Y.,
Kajiwara K.,
Hata K.
Publication year - 2010
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.3612
Subject(s) - common emitter , etching (microfabrication) , field ion microscope , nanostructure , tungsten , ion , field electron emission , focused ion beam , ion beam , helium , materials science , chemistry , optoelectronics , nanotechnology , layer (electronics) , electron , physics , organic chemistry , quantum mechanics , metallurgy
For focused ion beam technology in the next generation, an adequate emitter shape for field gas ion source was investigated to obtain a higher angular current density, dI/dΩ. A < 111 > ‐oriented tungsten emitter with a trimer‐terminated nanostructure was fabricated by field‐assisted oxygen etching method. Since this method does not utilize thermodynamic phenomena, e.g. faceting of crystal plane with a thermal treatment or pseudomorphic growth of surface layer, shape of the emitter tip has a rotational symmetry with no ridge lines which brings about a decrease of axial beam current. In the preliminary experiment for helium gas, an extraction of ion current was attempted from the trimer at the apex tip, and the increases in helium ion current and dI/dΩ in proportion to the gas pressure were observed. Copyright © 2010 John Wiley & Sons, Ltd.