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Sputtered and laser recrystalized phosphorus‐doped zinc oxide
Author(s) -
Sämann Marc,
Eisele Sebastian,
Bilger Gerhard
Publication year - 2010
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.3610
Subject(s) - zinc , dopant , x ray photoelectron spectroscopy , irradiation , phosphorus , doping , chemistry , sputtering , analytical chemistry (journal) , materials science , thin film , metallurgy , nanotechnology , chemical engineering , optoelectronics , environmental chemistry , physics , nuclear physics , engineering
Phosphorus‐doped zinc oxide (ZnO:P) films with red phosphorus as dopant were grown in a radio‐frequency target‐to‐intermediate‐target sputtering process. As‐grown ZnO:P films were annealed at 500 °C for relaxing the mechanical strain in the films, and subsequently laser irradiated. X‐ray diffraction and SIMS reveal surface melting of the thin films due to laser irradiation and a subsequent strain relaxation during their recrystalization in (0002) direction. X‐ray photoelectron spectroscopy hints at the formation of stable complexes, such as P Zn –2V Zn , with phosphorus occupying a zinc site (P Zn ) and zinc vacancies (V Zn ). Copyright © 2010 John Wiley & Sons, Ltd.