Sputtered and laser recrystalized phosphorus‐doped zinc oxide | Zendy

Sämann Marc | Zendy; Eisele Sebastian | Zendy; Bilger Gerhard | Zendy

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Sputtered and laser recrystalized phosphorus‐doped zinc oxide

Author(s) -

Sämann Marc,

Eisele Sebastian,

Bilger Gerhard

Publication year - 2010

Publication title -

surface and interface analysis

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.52

H-Index - 90

eISSN - 1096-9918

pISSN - 0142-2421

DOI - 10.1002/sia.3610

Subject(s) - zinc , dopant , x ray photoelectron spectroscopy , irradiation , phosphorus , doping , chemistry , sputtering , analytical chemistry (journal) , materials science , thin film , metallurgy , nanotechnology , chemical engineering , optoelectronics , environmental chemistry , physics , nuclear physics , engineering

Phosphorus‐doped zinc oxide (ZnO:P) films with red phosphorus as dopant were grown in a radio‐frequency target‐to‐intermediate‐target sputtering process. As‐grown ZnO:P films were annealed at 500 °C for relaxing the mechanical strain in the films, and subsequently laser irradiated. X‐ray diffraction and SIMS reveal surface melting of the thin films due to laser irradiation and a subsequent strain relaxation during their recrystalization in (0002) direction. X‐ray photoelectron spectroscopy hints at the formation of stable complexes, such as P Zn –2V Zn , with phosphorus occupying a zinc site (P Zn ) and zinc vacancies (V Zn ). Copyright © 2010 John Wiley & Sons, Ltd.

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