Premium
XPS study on band alignment at PtO‐terminated ZnO(000 1 ) interface
Author(s) -
Kim Taeyoung,
Yoshitake Michiko,
Yagyu Shinjiro,
Nemsak Slavomir,
Nagata Takahiro,
Chikyow Toyohiro
Publication year - 2010
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.3601
Subject(s) - x ray photoelectron spectroscopy , schottky barrier , work function , analytical chemistry (journal) , binding energy , schottky diode , materials science , valence band , bent molecular geometry , ultraviolet photoelectron spectroscopy , spectroscopy , vacuum level , platinum , chemistry , band gap , optoelectronics , layer (electronics) , atomic physics , nanotechnology , diode , nuclear magnetic resonance , physics , biochemistry , chromatography , quantum mechanics , composite material , catalysis
The band alignment at the interface between Pt and O‐terminated ZnO(000 1 ) was investigated by depositing Pt films on ZnO using X‐ray photoelectron spectroscopy and ultra violet photoelectron spectroscopy in an ultrahigh vacuum system. Angle‐resolved X‐ray photoelectron spectroscopy measurement showed the band was bent down by 0.06 eV at the ZnO(000 1 ) surface. The binding energy of Zn 2p doublet shifted toward higher values by 0.37 eV when Pt was deposited on ZnO(000 1 ). The work function of ZnO(000 1 ) was 4.08 eV and the valence band maximum measured by UPS on the clean ZnO(000 1 ) surface was 2.82 eV. As a result, the Schottky barrier height of Pt/ZnO(000 1 ) was 0.72 eV in this experiment. Copyright © 2010 John Wiley & Sons, Ltd.