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Electronic and optical properties of La‐aluminate dielectric thin films on Si (100)
Author(s) -
Tahir Dahlang,
Choi Eun Hye,
Cho Young Joon,
Oh Suhk Kun,
Kang Hee Jae,
Jin Hua,
Heo Sung,
Chung Jae Gwan,
Lee Jae Cheol,
Tougaard Sven
Publication year - 2010
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.3590
Subject(s) - thin film , analytical chemistry (journal) , band gap , refractive index , dielectric function , dielectric , materials science , chemistry , mineralogy , nanotechnology , optoelectronics , chromatography
Electronic and optical properties of (La 2 O 3 ) x (Al 2 O 3 ) 1− x thin films grown on Si(100) by the atomic layer deposition method were studied by means of reflection electron energy loss spectroscopy (REELS). The dielectric function ε( k , ω), index of refraction ( n ) and the extinction coefficient ( k ) for (La 2 O 3 ) x (Al 2 O 3 ) 1− x thin films were obtained from a quantitative analysis of REELS data. The band gap of (La 2 O 3 ) x (Al 2 O 3 ) 1− x thin films increases from 5.75 to 6.35 eV as the Al 2 O 3 content (1 − x ) increases from 0.5 to 0.75 in the compound. The optical properties described in terms of n , k , and ε of (La 2 O 3 ) x (Al 2 O 3 ) 1− x were obtained from REELS spectra by using QUEELS‐ε( k , ω)‐REELS software. They show that the electronic and optical properties of (La 2 O 3 ) x (Al 2 O 3 ) 1− x thin films are dominated by La 2 O 3 even for high Al 2 O 3 concentrations. Copyright © 2010 John Wiley & Sons, Ltd.