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NanoSIMS50 imaging of thin samples coupled with neutral cesium deposition
Author(s) -
Audinot JeanNicolas,
CabinFlaman Armelle,
Philipp Patrick,
Legent Guillaume,
Wirtz Tom,
Migeon HenriNoel
Publication year - 2011
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.3550
Subject(s) - sputtering , nanometre , caesium , ion , secondary ion mass spectrometry , chemistry , analytical chemistry (journal) , deposition (geology) , ion beam , mass spectrometry , static secondary ion mass spectrometry , thin film , resolution (logic) , materials science , nanotechnology , inorganic chemistry , chromatography , paleontology , organic chemistry , artificial intelligence , sediment , computer science , composite material , biology
Thanks to the 50 nm of lateral resolution of the NanoSIMS50, new fields of application have been opened to Secondary Ion Mass Spectrometry. The NanoSIMS50 imaging capabilities are however often hampered by the fact that, due to a high impact energy (16 keV) and normal incidence of the primary ion beam, the steady state is only reached after sputtering several nanometers (10–20 nm) of the sample. As a consequence, the secondary ion emission is very low during the sputtering of these first nanometers. This phenomenon, which is most pronounced for organic and biologic samples, induces artifacts of measurement. In a previous study, we have shown that negative secondary ion yields can be enhanced in Secondary Ion Mass Spectrometry (SIMS) by coupling the primary ion bombardment with a simultaneous neutral cesium deposition. As this method cannot be used directly on the NanoSIMS50, we propose here to perform SIMS analysis after a prior deposition of Cs 0 in a standalone UHV system. With this new method of analysis, organic thin films and proteins have been 3D monitored. Copyright © 2010 John Wiley & Sons, Ltd.