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Chemical depth profiling of copper oxide film by ToF‐SIMS using Bi 3 ++ cluster
Author(s) -
Masudome Harumi,
Abe Hiroko
Publication year - 2011
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.3504
Subject(s) - secondary ion mass spectrometry , copper , oxide , chemistry , analytical chemistry (journal) , ion , cluster (spacecraft) , metal , chlorine , time of flight , mass spectrometry , copper oxide , inorganic chemistry , computer science , programming language , chromatography , organic chemistry
In this contribution, we examined chemical information depth profiling of metal oxide film by time‐of‐flight Secondary Ion Mass Spectrometry (ToF‐SIMS). We focused on the oxidation of copper film used in a semiconductor field. As a result of the investigation of experimental conditions to analyze the chemical properties, it was shown that the molecular secondary ion intensities of [Cu x O y ] − were strong when using Bi 3 ++ cluster primary ions compared with Bi + primary ion. It was assumed that copper natural oxide film was Cu(OH) 2 /CuO/Cu 2 O/Cu layered structure, and approximately 2 nm thick. It was suggested that Cu 2 O became thick because of the existence of chlorine. Copyright © 2010 John Wiley & Sons, Ltd.