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Some surface and interface characterization and metrology requirements in the wafer processing industry
Author(s) -
Brundle C. R.
Publication year - 2010
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.3499
Subject(s) - wafer , characterization (materials science) , metrology , interface (matter) , x ray photoelectron spectroscopy , nanotechnology , surface (topology) , surface metrology , materials science , engineering physics , thin film , computer science , systems engineering , engineering , optics , physics , composite material , chemical engineering , surface finish , mathematics , capillary number , capillary action , profilometer , geometry
With the rapid decrease in thickness of deposited layers during silicon wafer processing, there has been a parallel increase in the use of surface/interface materials analysis techniques. There is now little distinction between surface/interface and thin film analysis when films are only a few nm thick. This brief review presents some of the general concepts and needs for both materials characterization and metrology; some of the current requirements these needs impose on analytical methods; and briefly reviews the status of a few of the techniques better known to the surface/interface analysis community, particularly XPS. Copyright © 2010 John Wiley & Sons, Ltd.