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An XPS study on the influence of nitrogen implantation on the passive layers developed on different tempers of AA7075 aluminum alloy
Author(s) -
Abreu C. M.,
Cristóbal M. J.,
Figueroa R.,
Pena G.,
Pérez M. C.
Publication year - 2010
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.3498
Subject(s) - x ray photoelectron spectroscopy , alloy , aluminium , nanocrystalline material , nitrogen , nitride , oxide , layer (electronics) , materials science , metallurgy , aluminum oxide , chemical composition , chemical engineering , chemistry , composite material , nanotechnology , organic chemistry , engineering
Abstract The present work analyzes the chemical effect of nitrogen implantation on the passive layer formed on different tempers of AA7075 aluminium alloy, T6 and T73. The experimental results from XPS depth profiles show that the air‐formed passive oxide, on both tempers, is mainly formed by Al 2 O 3 , highly hydrated, with Mg 2+ and small amounts of Zn 2+ . The only difference between both tempers is the amount of Zn 2+ , significantly higher in T73‐temper and located in the outermost region of the passive oxide layer. Nitrogen implantation produces a modified layer containing a nitride phase, identified as AlN probably nanocrystalline, as the BE of N1s at 397.4 ± 0.2 eV indicates and GAXRD has confirmed. Moreover, nitrogen implantation changes the composition of the Al 2 O 3 oxide by increasing the hydration content; no traces of Zn 2+ are detected in its composition. Copyright © 2010 John Wiley & Sons, Ltd.