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Comparison of electrical properties of HgCdTe subsurface layers formed by low energy ion beam milling or anodic oxidation
Author(s) -
Berchenko N.,
Izhnin I.,
Yudenkov V.,
Pociask M.,
Yakovyna V.
Publication year - 2010
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.3496
Subject(s) - anodic oxidation , ion beam , ion , materials science , ion milling machine , anode , beam energy , focused ion beam , optoelectronics , beam (structure) , nanotechnology , chemistry , optics , electrode , layer (electronics) , organic chemistry , physics
A comparative analysis has been carried out relating to p ‐to‐ n type conductivity conversion processes on vacancy and impurity‐ (As, Sb, Cu, Ag) doped p ‐HgCdTe(x ≈ 0.2) using ion milling and anodic oxidation followed by thermal annealing. The conductivity type conversion has been observed in vacancy‐doped material either under ion milling or under anodic oxide annealing, while in the case of impurity doped material only under ion milling. It was demonstrated that in all these processes the conversion was determined by the mercury interstitial diffusion from the corresponding mercury diffusion source and recombination with its native acceptors–cationic vacancies, or by donor complex formations (As, Sb doping), or displacing Cu (Ag) from the cationic sublattice sites into interstitials. Absence of type conversion under anodic oxide annealing in impurity doped p ‐HgCdTe is explained by insufficient Hg concentration in the source. The possibilities of changing the n ‐layer properties by laser‐excited shock waves are discussed. Copyright © 2010 John Wiley & Sons, Ltd.