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Specifics of Hg‐based narrow gap semiconductor oxidation
Author(s) -
Berchenko N. N.,
Kurbanov K.,
Fadeev S. V.
Publication year - 2010
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.3481
Subject(s) - oxide , metal , semiconductor , analytical chemistry (journal) , reflection (computer programming) , phase (matter) , thermal stability , materials science , chemistry , optoelectronics , metallurgy , organic chemistry , chromatography , computer science , programming language
The composition of the oxide and oxide‐semiconductor interface of HgZnTe and HgMnTe alloys was analyzed by the method of equilibrium condensed phase diagrams, and experimentally studied by X‐ray diffractometry (XRD) and reflection high‐energy electron diffraction. It is concluded that in comparison with the HgCdTe‐oxide interface, at the HgZnTe‐oxide interface in addition to metallic Hg the liberation of elemental Te occurs, and MnTe 2 with rich content of Te is liberated from the HgMnTe‐oxide interface. This explains the improvement in electrical properties of the anodic oxide structures and the thermal stability of MOS structures based on the sequence HgCdTe → HgMnTe → HgZnTe. Copyright © 2010 John Wiley & Sons, Ltd.