MCs +  depth profiling using cluster primary ions | Zendy

Niehuis E. | Zendy; Grehl T. | Zendy; Kollmer F. | Zendy; Moellers R. | Zendy; Rading D. | Zendy; Kersting R. | Zendy; Hagenhoff B. | Zendy

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MCs + depth profiling using cluster primary ions

Author(s) -

Niehuis E.,

Grehl T.,

Kollmer F.,

Moellers R.,

Rading D.,

Kersting R.,

Hagenhoff B.

Publication year - 2011

Publication title -

surface and interface analysis

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.52

H-Index - 90

eISSN - 1096-9918

pISSN - 0142-2421

DOI - 10.1002/sia.3465

Subject(s) - sputtering , ion , ionization , cluster (spacecraft) , chemistry , analytical chemistry (journal) , atomic physics , ionization energy , beam energy , beam (structure) , materials science , physics , nanotechnology , thin film , optics , programming language , organic chemistry , chromatography , computer science

The emission of Cs + and MCs + ions from various materials like Si, Al, Ti, Fe and Zn under Bi 1 and C 60 cluster bombardment is studied in the TOF‐SIMS dual‐beam mode with low‐energy Cs sputtering. High yield enhancements up to 2000 are observed for C 60 primary ions, in particular for materials with low sputter yields at high Cs surface concentration. The results indicate a significant improvement in the Cs + ionization probabilities for C 60 in the case of a work function smaller than the ionization potential of Cs. High, and rather uniform MCs + yields, can be achieved for the different materials, and depth profiling using cluster primary ions has a significant potential for quantitative SIMS analysis. Copyright © 2010 John Wiley & Sons, Ltd.

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