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Strategies for improving the sensitivity of FIB‐SIMS
Author(s) -
Li Libing,
McPhail David S.,
Yakovlev Nikolai,
Seng Hweeleng
Publication year - 2011
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.3450
Subject(s) - secondary ion mass spectrometry , ion , oxygen , flooding (psychology) , chemistry , sensitivity (control systems) , analytical chemistry (journal) , ionization , layer (electronics) , nanotechnology , engineering physics , materials science , environmental chemistry , physics , engineering , electronic engineering , psychotherapist , psychology , organic chemistry
Secondary ion yields need to be enhanced to provide higher sensitivity in the SIMS technique in order to meet the demands for high performance in surface analysis of ever‐decreasing analytical volumes. In this work, we investigated how the ionization probability could be improved by changing the surface chemistry prior to analysis by oxygen implantation and flooding. The ion‐induced altered layer was analyzed with the FIB‐SIMS and oxygen flooding was carried with the ION‐TOF IV. Copyright © 2010 John Wiley & Sons, Ltd.