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An analyis of trace metal contaminants on silicon surface by VPD‐ToF‐SIMS and VPD‐SIMS: towards 1E6‐1E7at/cm 2 detection limits
Author(s) -
Juhel Marc,
Trouiller Chantal,
Guiheux Denis,
Arsac Cyril,
Drogue Nathalie,
Couvrat Stephanie,
Grosjean Catherine
Publication year - 2011
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.3428
Subject(s) - silicon , wafer , analytical chemistry (journal) , secondary ion mass spectrometry , contamination , detection limit , chemistry , metal , mass spectrometry , semiconductor , materials science , nanotechnology , optoelectronics , environmental chemistry , chromatography , ecology , organic chemistry , biology
VPD‐SIMS and VPD‐TOFSIMS are used to detect ultra low level of metallic contaminants on silicon wafer surface. The combination of Secondary Ion Mass Spectrometry (SIMS) high sensitivity and Vapor Phase Decomposition (VPD) is capable to provide quantitative detection of metals with sub‐10 7 at/cm 2 detection limits on 200 mm and 300 mm silicon wafers surface. The quantification is validated by a correlation with Total X Ray Fluorescence (TXRF) measurements. This study sets down the quantification problematic and describes the protocol that was developed for the analysis and quantification. This complementary technique to VPD‐TXRF improves the detection of metallic contamination on silicon surface for the most advanced semiconductor technology. Copyright © 2010 John Wiley & Sons, Ltd.