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Using C 60 + sputtering to improve detection limit of nitrogen in zinc oxide
Author(s) -
Zhu Zihua,
Shutthanandan Vaithiyalingam,
Nachimuthu Ponnusamy
Publication year - 2011
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.3414
Subject(s) - sputtering , zinc , x ray photoelectron spectroscopy , nitrogen , analytical chemistry (journal) , detection limit , oxide , chemistry , materials science , metallurgy , thin film , nanotechnology , nuclear magnetic resonance , environmental chemistry , physics , chromatography , organic chemistry
C 60 + sputtering was firstly used to determine depth profile of nitrogen in zinc oxide materials by time‐of‐flight (ToF) SIMS. Compared to traditional Cs + sputtering depth profiling, the C 60 + sputtering provides increase in signal intensity by a factor of over 200 and improves the detection limit by a factor of about 10. In addition, our XPS results show that sputtering zinc oxide materials by 10 keV C 60 + leads to very little carbon deposition at the bottom of the sputter crater. Copyright © 2010 John Wiley & Sons, Ltd.