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SIMS using negative primary ion bombardment
Author(s) -
Pillatsch L.,
Wirtz T.,
Migeon H.N.,
Scherrer H.
Publication year - 2010
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.3388
Subject(s) - ion , ion source , ion beam , secondary ion mass spectrometry , static secondary ion mass spectrometry , ion beam deposition , primary (astronomy) , chemistry , analytical chemistry (journal) , beam (structure) , mass spectrometry , atomic physics , ion beam mixing , physics , optics , chromatography , organic chemistry , astronomy
Dynamic secondary ion mass spectrometry (D–SIMS) is an extremely powerful analysis technique for studying surfaces and thin films. The development of ion sources using electronegative elements is necessary to optimize the analysis of the electropositive elements. In this paper, we present SIMS analyses carried out with an F − primary ion beam. We discuss the performance of the duoplasmatron ion source operated with different gas mixtures in order to extract F − primary ions. The brightness of the F − ion beam was calculated and found to be superior to that obtained with an O − ion beam. Finally, we compare the useful yields of positive secondary ions obtained with F − bombardment to those determined for O − primary ions. Copyright © 2010 John Wiley & Sons, Ltd.