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Electronic and optical properties of GIZO thin film grown on SiO 2 /Si substrates
Author(s) -
Tahir Dahlang,
Lee Eun Kyoung,
Kwon Hyuk Lan,
Kun Oh Suhk,
Kang Hee Jae,
Heo Sung,
Lee Eun Ha,
Chung Jae Gwan,
Lee Jae Cheol,
Tougaard Sven
Publication year - 2010
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.3364
Subject(s) - thin film , refractive index , x ray photoelectron spectroscopy , band gap , analytical chemistry (journal) , molar absorptivity , spectral line , materials science , electron energy loss spectroscopy , sputter deposition , dielectric , sputtering , optics , chemistry , transmission electron microscopy , optoelectronics , nuclear magnetic resonance , physics , nanotechnology , chromatography , astronomy
The electronic and optical properties of GaInZnO (GIZO) thin films grown on SiO 2 /Si by r.f. magnetron sputtering were obtained by means of XPS and reflection electron energy loss spectroscopy (REELS). The optical properties represented by the dielectric function ε, refractive index n , extinction coefficient k and transmission coefficient T of GIZO thin films were obtained from a quantitative analysis of the REELS spectra. When the concentration ratios of Ga:In:Zn in GIZO thin films are 1:1:1, 2:2:1, 3:2:1 and 4:2:1, the bandgap values are 3.2, 3.2, 3.4 and 3.6 eV, respectively. The optical properties were determined from the energy loss of the REELS spectra by using quantitative analysis of electron energy loss spectra (QUEELS)‐ε( k , ω)‐REELS software. The optical properties depend on the Ga concentration, and the transmission in the visible region improved with increasing Ga concentration in GIZO. Copyright © 2010 John Wiley & Sons, Ltd.