Premium
XANES, USXES and XPS investigations of electron energy and atomic structure peculiarities of the silicon suboxide thin film surface layers containing Si nanocrystals
Author(s) -
Terekhov V. A.,
Turishchev S. Yu.,
Pankov K. N.,
Zanin I. E.,
Domashevskaya E. P.,
Tetelbaum D. I.,
Mikhailov A. N.,
Belov A. I.,
Nikolichev D. E.,
Zubkov S. Yu.
Publication year - 2010
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.3338
Subject(s) - suboxide , x ray photoelectron spectroscopy , nanoclusters , xanes , photoluminescence , silicon , materials science , annealing (glass) , analytical chemistry (journal) , spectroscopy , luminescence , absorption spectroscopy , nanotechnology , chemistry , chemical engineering , optics , optoelectronics , physics , metallurgy , chromatography , quantum mechanics , engineering
Films obtained using molecular‐beam deposition of SiO powder on c‐Si (111) substrates for the purpose of SiO 2 system formation with silicon nanocrystals were investigated before and after 900–1100 °C annealing by photoluminescence, ultrasoft X‐ray emission spectroscopy, X‐ray photoelectron spectroscopy, X‐ray absorption near edge structure spectroscopy and X‐ray diffraction. The appearance of (111) oriented luminescent silicon nanoclusters in considerable amounts on annealing at 1000–1100 °C is established in the investigated films. An anomalous phenomenon of the X‐ray absorption quantum yield intensity inversing for the L 2, 3 elementary silicon edge is detected. Models for this phenomenon are suggested. Copyright © 2010 John Wiley & Sons, Ltd.