Interface state density analyzing of Au/TiO 2 (rutile)/n–Si Schottky barrier diode

The purpose of this study is to analyze interface states ( N ss ) in Au/TiO 2 (Rutile)/n–Si Schottky barrier diodes (SBDs). TiO 2 was deposited on a n–Si substrate by reactive magnetron sputtering and annealed at 900 °C for 4 h in atmosphere to obtain rutile phase. The current voltage (I‐V) characteristics of SBDs were measured at room temperature. From the I‐V characteristics of the SBDs ideality factor ( n ) and zero‐bias barrier height values (ϕ Bo ) 2.3 and 0.76 eV, respectively, were obtained. The N ss distribution profile ( N ss ) as a function of ( E c − E ss ) was extracted from the forward‐bias I‐V measurements by taking account effective barrier height and (ϕ e ) and series resistance ( R s ) for the Schottky diode. N ss values ranges from 4.3 × 10 12 cm −2 eV −1 in ( E c − 0.33) eV and 8.0 × 10 13 cm −2 eV −1 in ( E c − 0.33) eV. These values are better than in the literature values where TiO 2 was deposited sol‐gel method. The N ss values taking into R s were lower than without R s . This shows that R s should be taking account. Copyright © 2010 John Wiley & Sons, Ltd.