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Pt 2 + , 4+ ions in CeO 2 rf‐sputtered thin films
Author(s) -
Matolín V.,
Khalakhan I.,
Matolínová I.,
Václavů M.,
Veltruská K.,
Vorokhta M.
Publication year - 2010
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.3327
Subject(s) - x ray photoelectron spectroscopy , materials science , cerium , sputter deposition , analytical chemistry (journal) , crystallite , thin film , cerium oxide , sputtering , oxide , doping , wafer , nanotechnology , chemical engineering , chemistry , metallurgy , optoelectronics , chromatography , engineering
The interaction of Pt with CeO 2 in Pt‐doped cerium oxide layers deposited on a Si wafer at normal and grazing incidence, and on multiwall carbon nanotubes (MWCNTs), was investigated by using X‐ray photoelectron spectroscopy (XPS). 30‐nm‐thick Pt‐doped CeO 2 layers were deposited by rf‐magnetron sputtering of a composite CeO 2 –Pt target. XPS showed formation of cerium oxide with completely ionized species Pt 2 + , 4+ embedded in the film. The Pt 2+ /Pt 4+ ratio depends on the deposition angle and increases in the case of the film deposition on the MWCNTs. This behavior was explained by the dependence of the polycrystalline film grain morphology on a deposition angle. Copyright © 2010 John Wiley & Sons, Ltd.