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Kinetics of rhodium electrodeposition for semiconductor interconnect applications
Author(s) -
Son SeongHo,
Lee HongKee,
Park SungCheol
Publication year - 2010
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.3288
Subject(s) - rhodium , materials science , electrolyte , semiconductor , kinetics , chemical engineering , chemistry , electrode , catalysis , optoelectronics , organic chemistry , physics , quantum mechanics , engineering
In this study, reaction mechanism of rhodium electrodeposition process for semiconductor interconnection was investigated using rotating disk electrode. To clarify the rate determining step, the activation energy (E a ) of the rhodium electrodeposition was calculated from the Arrhenius plot in the temperature range of 25–65 °C. Experimental E a of rhodium was 3.25 kcal/mole, indicating that electrodeposition rate is controlled by mass transfer. The effects of additives on bottom‐up filling were also investigated by varying species of accelerators, suppressors and levelers. The effect of filling rhodium into nano‐scale trench was evaluated using various combinations of accelerators, suppressors and levelers. After rhodium electrodeposition using polymer type suppressor and sulfide bond type accelerator, the superconformal electrodeposited layer was obtained without seams and voids. Addition of azole type leveler to the above electrolyte led to decrease in topographic variations of rhodium electrodeposit, resulting in increase of flatness. As a result, nano‐scale trenches (apppproximately 50–300 nm) were filled forming void‐free and seam‐free superconformal electrodeposited layers through the optimized selection of the additives. Copyright © 2010 John Wiley & Sons, Ltd.