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Electrochemical grafting of poly(3‐hexylthiophene) on porous silicon for gas sensing
Author(s) -
Belhousse S.,
Boukherroub R.,
Szunerits S.,
Gabouze N.,
Keffous A.,
Sam S.,
Benaboura A.
Publication year - 2010
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.3284
Subject(s) - fourier transform infrared spectroscopy , porous silicon , thiophene , materials science , scanning electron microscope , monomer , grafting , silicon , chemical engineering , electrochemistry , polymerization , acetonitrile , covalent bond , analytical chemistry (journal) , polymer chemistry , chemistry , polymer , electrode , organic chemistry , optoelectronics , composite material , engineering
Abstract The paper reports on the preparation of a porous silicon (PSi)/poly(3‐hexylthiophene) hybrid structure and its application in gas sensing. The poly(3‐hexylthiophene) was covalently grafted on the PSi surface in a stepwise process. Electropolymerizable thiophene groups were covalently linked to an azide‐terminated PSi surface using ‘click chemistry’ approach. Poly(3‐hexylthiophene) films were grown on the thiophene‐terminated PSi interface using electropolymerization in acetonitrile in the presence of 3‐hexylthiophene monomer. Fourier transform infrared (FTIR) spectroscopy, scanning electron microscopy (SEM) and electrochemical measurements were performed to follow the chemical composition and structural changes after each step. The sensitivity, response time and capacitance response of the device to gas environment have been investigated. The results show that current–voltage characteristics are modified by the presence of the gas, and the sensor displays a rapid and reversible response at room temperature. Copyright © 2010 John Wiley & Sons, Ltd.