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A comparative study on ridge waveguide laser diodes with SiO 2 and SiN x passivation layers
Author(s) -
Bengi A.,
Jang S. J.,
Yeo C. I.,
Mammadov T.,
Özçelik S.,
Lee Y. T.
Publication year - 2010
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.3278
Subject(s) - passivation , metalorganic vapour phase epitaxy , diode , materials science , chemical vapor deposition , optoelectronics , electrical resistivity and conductivity , laser , fabrication , layer (electronics) , deposition (geology) , ridge , analytical chemistry (journal) , optics , chemistry , electrical engineering , nanotechnology , epitaxy , medicine , paleontology , physics , engineering , alternative medicine , pathology , sediment , biology , chromatography
Abstract In this study, we have reported the fabrication and device characteristics of metal organic chemical vapor deposition (MOCVD) grown 1.3‐µm InP‐based InGaAsP multiquantum well ridge waveguide laser diodes (LDs) for communication systems. The LD parameters such as threshold current, differential resistivity and output power for SiO 2 and SiN x passivation layers have been compared. Fabricated LDs have a threshold current, differential resistivity and output power values of 42 mA, 20 Ω, 9.3 mW and 51 mA, 25 Ω, 6.8 mW for SiO 2 and SiN x passivation layers, respectively. The analyses showed that the fabricated LD with SiO 2 passivation layer has a better performance than the other one in the view of lower threshold current, differential resistivity and higher output power. Copyright © 2010 John Wiley & Sons, Ltd.